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NTR4101P, NTRV4101P
Trench Power MOSFET
? 20 V, Single P ? Channel, SOT ? 23
Features
? Leading ? 20 V Trench for Low R DS(on)
? ? 1.8 V Rated for Low Voltage Gate Drive
? SOT ? 23 Surface Mount for Small Footprint
? NTRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? Load/Power Management for Portables
? Load/Power Management for Computing
? Charging Circuits and Battery Protection
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 20 V
G
http://onsemi.com
R DS(ON) TYP
70 m W @ ? 4.5 V
90 m W @ ? 2.5 V
112 m W @ ? 1.8 V
P ? Channel MOSFET
S
I D MAX
? 3.2 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
? 20
± 8.0
Unit
V
V
Continuous Drain
Current (Note 1)
Steady
State
t ≤ 10 s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
? 2.4
? 1.7
? 3.2
A
D
MARKING DIAGRAM &
PIN ASSIGNMENT
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
T A = 25 ° C
P D
0.73
1.25
W
3
3
Drain
Continuous Drain
Current (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 1.8
? 1.3
A
1
2
TR4 M G
G
Power Dissipation
(Note 2)
Pulsed Drain Current
T A = 25 ° C
tp = 10 m s
P D
I DM
0.42
? 18
W
A
SOT ? 23
CASE 318
STYLE 21
1
Gate
2
Source
ESD Capability (Note 3)
C = 100 pF,
RS = 1500 W
ESD
225
V
TR4 = Device Code
M = Date Code
SOT ? 23
3000 / Tape &
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V GS = ? 8 V, I L = ? 1.8 Apk, L = 10 mH,
R G = 25 W )
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
T J ,
T STG
I S
EAS
T L
? 55 to
150
? 2.4
16
260
° C
A
mJ
° C
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
NTR4101PT1G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NTR4101PT1H
NTRV4101PT1G
(Pb ? Free)
SOT ? 23
(Pb ? Free)
Reel
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2014
January, 2014 ? Rev. 10
1
Publication Order Number:
NTR4101P/D
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NTR4170NT3G 功能描述:MOSFET NFET SOT23 30V 4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4171P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171PT1G 功能描述:MOSFET PFET SOT23 30V TR 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4171PT3G 功能描述:MOSFET PFET SOT23 30V 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube